CMOS-compatible contact technology for Si photonics

摘要

In this paper, we present a short overview of the CMOS-compatible contact technology developed in our group on n-InP and p-InGaAs for Si photonic applications. Obtained results cover a wide spectrum: from surface preparation and solid-state reaction to electrical results and laser integration. The metallurgy of several systems including Ni / InGaAs, Ni / InP, Ti / InGaAs and Ti / InP has been studied. Most of the metallizations studied provide efficient solutions for contacting n-InP and p-InGaAs. Finally, guidelines for integrating low resistivity contacts are proposed.