Transfer printing of nanostructured membrane with elastomeric stamp and its application to TMDC-based field-effect transistors

摘要

This paper describes a basic concept relevant to deterministic transfer of molybdenum disulfide (MoS) with optically transparent elastomeric stamp for constructing field-effect transistors (FETs). A simple fabrication process involving the formation of gate dielectrics and gate electrode, the deposition of source/drain contacts and the lamination of MoS flakes is established. The proposed method is suitable for research in electrical characteristics of various TMDC FETs.