Formation of arsenic segregated Ytterbium and Nickel silicide using microwave annealing

摘要

This work investigates the formation of arsenic segregated Ytterbium and Nickel silicide using low-temperature microwave annealing. Two types of dopant segregation approaches, implant-before-silicidation and implantation-through-metal, are performed to examine the electrical properties of the microwave annealed silicide. Results of current-voltage curves and dopant distribution profiles are compared with those using rapid thermal annealing.