Two-dimensional Carrier Profiling with Sub-nm Resolution Using SSRM: From Basic Concept to TCAD Calibration and Device Tuning

摘要

As the downscaling in semiconductor industry continues, the correct operation of CMOS-devices becomes extremely dependent on the precise location and activation of dopants in two dimensions. While for the previous (and thus less scaled) technologies enough information on dopant profiles could be gained from one-dimensional (ID) profile measurements (SRP and SIMS), two-dimensional (2D) measurement techniques are becoming essential to understand the intrinsic 2D nature of the devices and validate 2D process models.