Influence of Interfacial Structure on Electrical Properties of Metal/Ge Schottky Contacts

摘要

A Ge channel metal-oxide-semiconductor field effect transistor (MOSFET) is an attractive alternative to a Si MOSFET for future ultra large integrated circuits because both electron and hole mobility in Ge are higher than Si [1]. It is necessary to establish metal/Ge contact technology for Ge MOSFET in order to realize high performance Ge devices. Schottky barrier heights (SBH) engineering at a metal/Ge interface is a key factor to realize a low contact resistance for Ge MOSFET.