The Challenges and Progress of USJ Formation Process Integration for 32nm Technology and beyond

摘要

Future devices will be fabricated with high-k/metal gate stack and possibly employ high mobility channel materials. Ultra shallow junction (USJ) research targeted for devices scaled to 32nm and beyond should address the compatibility with the advanced gate stack and new channel materials. This paper discusses recent progress in USJ formation targeted for future Si and Ge channel devices. Challenges of USJ module for scaled CMOS technologies will be highlighted.