Thermal Stability improvement of Nickel Germanosilicide Utilizing Ni-Ta Alloy and Co/TiN Cappling layer for Nano-scale CMOS Technology

摘要

In this paper, highly thermal stable Nickel Germanosilicide utilizing Ni-Ta alloy and Co/TiN capping layer (Ni-Ta/Co/TiN tri-layer) is proposed for high performance strained Si CMOS technology. The proposed Nickel Germanosilicide utilizing Ni-Ta/Co/TiN structure exhibits low temperature silicidation and wide range of Rapid Thermal Process (RTP) process window. Moreover, sheet resistance shows stable characteristics up to 700 °C for 30 min high temperature annealing and the surface of Ni-Ta/Co/TiN structure is much smoother than that of Ni/Co/TiN structure both after RTP and post-silicidation annealing. Therefore, the thermal immune Nickel Germanosilicide using the Ni-Ta/Co/TiN tri-layer is highly promising for future SiGe based nano-scale CMOS technology.