Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes

机译：高功率红色激光二极管InGaP / IngaAlp量子阱的热性能分析

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摘要

The effect quantum well (QW) strain on the thermal performance of InGaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to a reduced electron leakage.

机译：从理论上研究了在约635nm左右发射的Inmap / Ingaalp激光器的热性能上的效果阱（qw）应变。结果发现，由于电子泄漏减少，压缩性QWS提供了卓越的热性能。

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《International Conference on Numerical Simulation of Optoelectronic Devices》|2008年||共2页
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作者
Qiu Bocang; McDougall Stewart; Yanson Dan;
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原文格式 PDF
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中图分类 TN36-53;
关键词
InGaAlP; Red lasers;

机译：Ingaalp;红色激光器;

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专利

1. Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes [J] . Bocang Qiu, Stewart McDougall, Dan Yanson, Optical and quantum electronics . 2008,第14a15期

机译：大功率红色激光二极管InGaP / InGaAlP量子阱的热性能分析
2. 40-mW 100/spl deg/C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes [J] . Shimada N., Horiuchi O. IEEE journal of selected topics in quantum electronics . 1999,第3期

机译：655nm波段InGaP-InGaAlP应变多量子阱激光二极管的最高工作温度为40mW 100 / spl deg / C
3. Continuous wave visible InGaP/InGaAlP quantum-well surface-emitting laser diodes [J] . Huang K.F., Tai K. IEEE Transactions on Electron Devices . 1993,第11期

机译：连续波可见InGaP / InGaAlP量子阱表面发射激光二极管
4. Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes [C] . Qiu Bocang, McDougall Stewart, Yanson Dan International Conference on Numerical Simulation of Optoelectronic Devices . 2008

机译：高功率红色激光二极管InGaP / IngaAlp量子阱的热性能分析
5. Thermal Characterization of High-Power Diode Lasers Using Thermoreflectance [D] . Jha, Aman Kumar. 2021

机译：使用热反射的高功率二极管激光器的热表征
6. Thermal Characterization Crystal Field Analysis and In-Band Pumped Laser Performance of Er Doped NaY(WO4)2 Disordered Laser Crystals [O] . María Dolores Serrano, Concepción Cascales, Xiumei Han, -1

机译：热特性晶体场分析和波段泵浦掺铒的NaY（WO4）2种无序激光晶体的激光性能
7. Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers [O] . Bryan Melanson, Cheng Liu, Jing Zhang 2021

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8. High-Power Diode-Laser-Pumped Midwave Infrared HgCdTe/CdZnTe Quantum-Well Lasers [R] . Le, H. Q., Arias, J. M., Zandian, M., 1994

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Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes

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