首页> 外文会议>International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems >Analytical multi-step homogenization methodology for a stack of thin films in microelectronics
【24h】

Analytical multi-step homogenization methodology for a stack of thin films in microelectronics

机译:微电子中薄膜薄膜的分析多步均质方法

获取原文

摘要

The manufacturing process causes silicon wafer curvature because of the thermomechanical mismatch between each layers and the substrate. This curvature depends on many factors such as the properties of the used materials (Young’s modulus, Poisson’s ratio,
机译:由于每个层和基板之间的热机械失配,制造过程导致硅晶片曲率。 这种曲率取决于许多因素,例如二手材料的性质(杨氏模量,泊松比,

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号