首页> 外文会议>International Symposium on Quality Electronic Design >A 3D-Layout Aware Binding Algorithm for High-Level Synthesis of Three-Dimensional Integrated Circuits
【24h】

A 3D-Layout Aware Binding Algorithm for High-Level Synthesis of Three-Dimensional Integrated Circuits

机译:一种三维集成电路高电平合成的3D布局意识绑定算法

获取原文

摘要

Recent progress in the fabrication of three-dimensional integrated circuits has opened up the possibility of exploiting this technology to alleviate performance and power related issues raised by interconnects in nanometer CMOS. Physical synthesis for three-dimensional integrated is substantially different from traditional planar integrated circuits due to the presence of additional constraints of placing circuit blocks in multiple die. To realize the full potential offered by three-dimensional integrated circuits, high-level synthesis of these circuits must take layout-related issues unique to 3-D technology into account during the synthesis process. We present a 3-D layout aware binding algorithm for high-level synthesis that tightly integrates the synthesis tasks of resource binding, assignment of modules to multiple die, 3-D floorplanning, and inter-die via minimization. Since floorplanning and resource binding are interdependent, the algorithm can significantly outperform traditional high-level synthesis flows that separate these tasks. Compared to a traditional 3-D layout-unaware binding, experiments show that our approach can improve the total wirelength by 29% on average, while the longest netlength is reduced by 21%. In addition, the number of through-die via count is reduced by 27%. These optimizations are achieved with no penalty in chip area.
机译:三维集成电路制造的最近进展已经开辟了利用这种技术来缓解这种技术,以缓解纳米CMOS互连延伸的性能和电力相关问题。由于存在在多个管芯中放置电路块的附加限制,三维集成的物理合成与传统的平面集成电路基本上不同。为了实现三维集成电路提供的全部潜力,在合成过程中,这些电路的高级别合成必须考虑到3-D技术独特的布局相关问题。我们介绍了一个三维布局意识的绑定算法,用于高级合成,将资源绑定的合成任务紧密集成,通过最小化将模块分配给多个管芯,3-D平面图和模切。由于地面平面图和资源绑定是相互依存的,因此该算法可以显着优于传统的高级合成流,从而分离这些任务。与传统的3-D布局无畏结合相比,实验表明,我们的方法平均可以将总磨风长度提高29%,而最长的NetLength降低了21%。此外,通芯数量的数量减少了27%。这些优化在芯片区域中没有罚化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号