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ALD growth behavior of high-k nanolayers on various substrates characterized by X-Ray Spectrometry in gracing incidence geometry

机译:X射线光谱法表征高k纳米层在各种基底上的ALD生长行为

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摘要

In the grazing incidence regime XRS and NEXAFS provide the sensitivity to investigate low mass depositions in the sub-nanometer regime even if they are buried under capping layers of up to 100 nm. The methodologies are nondestructive and in the case of the reference-free approach XRS provides a high reliability combined with a high flexibility in respect to the material systems of interest.
机译:在掠入射状态下,即使XRS和NEXAFS被掩埋在最高达100 nm的覆盖层下,它们也可以研究亚纳米状态下的低质量沉积。该方法是非破坏性的,在采用无参考方法的情况下,XRS相对于所关注的材料系统提供了高可靠性和高灵活性。

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