METHOD FOR CHARACTERIZING A STACK OF LAYERS BY MEANS OF ELECTRICAL MEASUREMENTS AND SPECTROMETRY OF LIVE X-RAY PHOTOELECTRONS, STACK OF LAYERS FOR IMPLEMENTING THE PROCESS, METHOD OF MANUFACTURING THE LAYER STACKING

摘要

Stack of layers for characterizing a gate layer (E) by means of electrical measurements and photoelectron spectrometry induced by VGmes X-rays, said stack of layers comprising a semiconductor substrate (S) and an insulating layer (O) in which are formed a first (P) and a second (D) cavities, the first cavity (P) comprising a grid layer (E) covering the bottom of the first cavity (P), the side walls of the first cavity (P) and projecting on the upper face of the insulating layer delimiting the first cavity (P), the second cavity (D) comprising a grid layer (E) having the same composition and the same thickness as the grid layer of the first cavity (P) and covering the bottom of the second cavity (D), the side walls of the second cavity (D) and projecting over the upper face of the insulating layer delimiting the second cavity (D),