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Multi-port Memory Design Methodology Based on Block Read and Write

机译:基于块读写的多端口存储器设计方法

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Multi-port memory design methodology based on block read/write is proposed in this paper. This new multi-port memory is constructed using 1-port memory banks and features parallel read/write access with low port access rejection probability. In comparison with conventional implementation of multi-port memory based on 1-port memory banks, the number of necessary 1-port memory banks is greatly reduced. Moreover, the complexity of switching network and arbitration circuits are also simplified. A tri-port memory is designed using off-the-shelf memory chips. Experiment results show that this multi-port memory design methodology is correct and the implemented multi-port memory performs well.
机译:本文提出了基于块读/写的多端口存储器设计方法。这种新的多端口存储器使用1端口存储体构造,并具有低端口访问抑制概率的并行读/写访问。与基于1端口存储体的多端口存储器的传统实现相比,需要大大减少了所需的1端口存储体的数量。此外,还简化了开关网络和仲裁电路的复杂性。使用现成的内存芯片设计三端口存储器。实验结果表明,该多端口存储器设计方法是正确的,所实现的多端口存储器执行良好。

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