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Comparison of high-voltage linear transmitter topologies for ultrasound CMUT applications

机译:超声CMUT应用的高压线性发射器拓扑比较

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In this paper, we present a comparison of high-voltage linear transmitter circuits for driving capacitive micro-machined ultrasound transducers (CMUTs). CMUTs are emerging transducer elements in ultrasound imaging applications. Two different circuit topologies for the high-voltage linear transmitter with a 40 V peak-to-peak output voltage are compared. We compare the two designs based on total harmonic distortion, power consumption, bandwidth and area for same voltage gain. The designs are done in AMS 0.18 μm technology, and utilize Si LDMOS device for a high-voltage output.
机译:在本文中,我们展示了用于驱动电容微加工超声换能器(CMUT)的高压线性发射器电路的比较。 CMUT在超声成像应用中出现换能器元件。比较高压线性发射器的两个不同电路拓扑,比较了40V峰到峰值输出电压。我们基于总谐波失真,功耗,带宽和面积相同的电压增益进行比较两种设计。该设计在AMS0.18μm技术中完成,并利用SI LDMOS器件进行高压输出。

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