Effect of doping profile on tunneling field effect transistor performance

摘要

Tunneling field effect transistor (TFETs) has recently attracted considerable interest because of their potential use in low power logic application. In this paper, we have investigated the effect of uniform doping versus varying doping (Gaussian) profile on TFET performance. We have shown that off-state current and subthreshold slope (SS) in the TFET can be improved by using low doping profile at channel-drain junction. It provides an improved ION/IoFF and subthreshold slope of 1010 and 47 mV/dec respectively. Also by placing small high density layer in the channel near source-channel junction improve the SS to 43 mV/dec and Ion current by a few order. Finally, it is shown that ambipolar behavior is also reduced.