首页> 外文会议>IEEE Nanotechnology Materials and Devices Conference >PREPARATION, GROWTH MECHANISM AND CHEMICAL COMPOSITIONAL ANALYSIS OF NANOCRYSTALLINE SB{sub}2(S{sub}(1-x),SE{sub}x){sub}3 THIN FILMS USING ARRESTED PRECIPITATION TECHNIQUE (APT)
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PREPARATION, GROWTH MECHANISM AND CHEMICAL COMPOSITIONAL ANALYSIS OF NANOCRYSTALLINE SB{sub}2(S{sub}(1-x),SE{sub}x){sub}3 THIN FILMS USING ARRESTED PRECIPITATION TECHNIQUE (APT)

机译:使用被捕沉淀技术(APT)的纳米晶体Sb {Sub} 2(s {sub} 2(s {sub} 2(s {sub} 2(s×}(s×}),se {sem} x){sem} 3薄膜的制备,生长机理和化学成分分析

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Combinational thin films of antimony sulphoselenide [Sb{sub}2(S{sub}(1-x)Se{sub}x){sub}3] have been synthesized on a good quality glass substrates using newly developed arrested precipitation technique (APT) by us. Sb(III) ions were arrested using aqueous alkaline solution of organic complexing agent. Highly reflecting uniform and tightly adhesive thin films were formed by optimizing various preparative conditions such as concentration, temperature, pH and rate of agitation on to a amorphous glass substrates. For the first time antimony chalcogenide films were analysed using 4' bromo PTPT reagent by spectrophotometric and atomic absorption spectroscopic (AAS) technique. Statistical assessment of the results show the formation of combinatorial thin films of Sb{sub}2S{sub}3 with Sb{sub}2Se{sub}3 which confirm the general formula [Sb{sub}2(S{sub}(1-x)Se{sub}x){sub}3]. A band gap of combinatorial phase of [Sb{sub}2(S{sub}0.5Se{sub}0.5){sub}3] 1.65eV is obtained from electrical and optical studies. From the electrical measurement an activation energy of 0.8eV is obtained in the temperature range 273-475K. Optical absorption studies show that transitions are direct and allowed ones.
机译:组合亚磺烯酮的薄膜[Sb {sub} 2(s {sub} 2(s {sub} 2 se {sem} x){sub} 3)已经在使用新开发的被捕的降水技术(apt)的良好质量的玻璃基板上合成) 被我们。使用有机络合剂的碱性溶液被捕获Sb(III)离子。通过优化各种制备条件,例如浓度,温度,pH和搅拌速率对非晶玻璃基板来形成高度反射均匀和紧密的粘合薄膜。对于第一次通过分光光度法和原子吸收光谱(AAS)技术使用4'BROMO PTPT试剂分析锑的硫属化物膜。结果的统计评估显示了SB {sub} 2s {sub} 3的组合薄膜的形成,其中sb {sub} 2se {sub} 3,其确认通式[sb {sub} 2(s {sub}(1 -x)se {sub} x){sub} 3]。从电和光学研究获得[Sb {sub} 2(s {sub} 2的组合阶段的带隙[Sb {sub} 2(s {sub} 0.5se {sub} 3] 1.65ev。从电气测量,在273-475K的温度范围内获得0.8EV的激活能量。光学吸收研究表明过渡是直接和允许的。

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