Resistive switching in Pt/Ta2O5/TiN structure for nonvolatile memory application

摘要

The bipolar resistive switching characteristics of the Ta2O5-based resistive random access memories with a Pt/Ta2O5/TiN structure are investigated in this work. The proposed device exhibits a small set voltage of 0.76 V. The resistance ratio of ON/OFF state has a good stability with the compliance current of 1mA and 10mA that is useful for the multi-level data storage application. In addition, good endurance larger than 10⁵ cycles under pulse switching operation and retention characteristics up to 10⁴ s at room temperature have been achieved in this work.