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Strength determination of light-emitting diodes and chip structure design

机译:发光二极管和芯片结构设计的强度测定

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Light-emitting diodes (LEDs), representing a type of solid-state lighting, have been widely used as indicator lamps in the past few decades. It has attracted a great deal of attention in various illuminating applications in recent years due to its outstanding advantages, such as low power cost, long life time, and high efficiency. However, to make it possible to apply LED in daily life, a suitable package structure is necessary, which provides electrical interconnection and protection functions. Recently, the technology for a high power LED packaging that employs applied wire bonding process to achieve electrical interconnection has been widely adopted by LED packaging house. However, improper wire bonding parameters often result in LED die cracking or pad peeling. In this study, the strength of LED dies was investigated in order to improve the yielding of wire bonding. To determine its strength, point-load test associated with focusedion beam was utilized to measure the ultimate reactive force. Results of the experiment were further integrated with simulation technology based on the finite element method to evaluate its ultimate strength. In the PLT tests, direct contact pin-loading was applied to the epilayer surface of the LED dies and the ultimate force was measured. After the PLT tests, FIB was utilized to investigate fracture initiating location in the epilayer. The PLT results showed that the averaged ultimate force is about 75 g. According to the FIB results, the vertical load was validated as the driving force for pad peeling, epilayer crack, and LED die crack. Based on the experimental data, an FEM 3D contact model was utilized to analyze its detailed mechanical behaviours. Simulation results showed that stress concentration occurred near the edge of the pin and that the maximum stress took place in epilayer. In order to reduce the stress, three kinds of new LED structures that introduce the stress buffer layer between the Au pad and LED layers were evalua- - ted, and the results showed good improvement of stress reduction in the epilayer. Nevertheless, the soft material applied for the stress buffer structure may cause another failure issue under thermal loading during the bonding process due to the mismatch of the coefficient of thermal expansion. Therefore, to achieve the optimal design and the best combination of design parameters, the simulation-based design methodology must be adopted to meet the design and production optimization goals, which would be impossible if done by conventional experiment-based trial-and-error design procedure.
机译:发光二极管(LED),代表一种固态照明的类型,在过去几十年中被广泛用作指示灯。由于其出色的优势,例如低功率成本,长寿命和高效率,它引起了近年来各种照明应用中的大量关注。然而,为了使可以在日常生活中应用LED,需要合适的封装结构,这提供了电互连和保护功能。最近,用于采用应用线键合工艺实现电互连的高功率LED封装的技术已被LED包装屋广泛采用。然而,不正确的引线键合参数通常导致LED管芯裂纹或垫剥离。在这项研究中,研究了LED模具的强度,以改善引线键合的屈服。为了确定其强度,利用与聚焦光束相关的点载试验来测量最终的反应力。基于有限元法进一步与仿真技术进一步集成了实验结果,以评价其极限强度。在PLT测试中,将直接接触销加载施加到LED模具的脱垂表面,并测量最终的力。在PLT测试之后,利用FIB来研究骨折中的裂缝引发位置。 PLT结果表明平均最终力约为75克。根据FIB的结果,垂直载荷被验证为垫剥离,外膜裂缝和LED模具裂纹的驱动力。基于实验数据,利用FEM 3D接触模型来分析其详细的机械行为。仿真结果表明,销边缘附近发生应力浓度,并且在外膜中发生最大应力。为了减小应力,三种新的LED结构在Au焊盘和LED层之间引入应力缓冲层的次数是评估的,结果表明良好地改善了外膜的应力降低。然而,由于热膨胀系数不匹配,施加用于应力缓冲器结构的软材料可能在粘接过程中导致热负荷下的另一个故障问题。因此,为了实现最佳的设计和设计参数的最佳组合,必须采用基于模拟的设计方法来满足设计和生产优化目标,如果通过以常规实验的试验和错误设计完成,这将是不可能的程序。

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