Fracture Properties of Silicon Carbide Thin Films Characterized by Bulge Test of Long Membranes

摘要

The mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. Plane-strain modulus E{sub}(ps), prestress s{sub}0, and fracture strength s{sub}(max) for 3C-SiC thin films with thickness of 0.40 μm and 1.42 μm were extracted. The E{sub}(ps) values of SiC are strongly dependent on grain orientation. The thicker SiC film presents lower s{sub}0 than the thinner film due to stress relaxation. The s{sub}(max) values decrease with increasing film thickness. The statistical analysis of the fracture strength data were achieved by Weibull distribution function and the fracture origins were predicted.