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T4 Bacteriophage based Extended Gate Field Effect Transistors (T4B-EGFETs) for Bacteria Detection

机译:基于噬菌体的延伸栅极场效应晶体管(T4B-EGFET)用于细菌检测

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A T4 Bacteriophage based Extended Gate Field Effect Transistor (T4B-EGFET) was developed for viable bacteria detection. T4 bacteriophages were chemically immobilized on the surface of the extended gate connected to a MOSFET device for sensitive and specific detection of E. coli B bacteria cells. The capturing of the target bacteria cells by the anchored phages will induce a chemical potential, resulting in the shift of the threshold voltage, based on which the limit of detection (LOD) was obtained as 14±3 cfu/mL with a wide dynamic detection range (102~108 cfu/mL). Generalized gm/Id theory was employed for normalized electronic-electrochemical sensitivity analysis and the FET optimized working regime had been identified to be moderate inversion for bacteria detection.
机译:为可行的细菌检测开发了一种T4噬菌体的延长栅极场效应晶体管(T4B-EGFET)。将T4噬菌体在连接到MOSFET装置的延伸栅极的表面上化学固定,用于敏感和特异性检测大肠杆菌B细胞细胞。通过锚定噬菌体捕获靶细菌细胞将诱导化学电位,导致阈值电压的偏移,基于该阈值电压的偏移,基于该阈值电压的偏移,并获得具有宽动态检测的14±3 CFU / mL的检测限(LOD)范围(10. 2 〜10 8 cfu / ml)。广义G. m /一世 d 理论用于归一化的电子电化学敏感性分析,并鉴定了FET优化的工作制度是对细菌检测的中度反转。

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