首页> 外文会议>International Conference on Ubiquitous and Future Networks >Soft-Event-Upset and Soft-Event-Transient Tolerant CMOS Circuit Design for Low-Voltage Low-Power Wireless IoT Applications
【24h】

Soft-Event-Upset and Soft-Event-Transient Tolerant CMOS Circuit Design for Low-Voltage Low-Power Wireless IoT Applications

机译:用于低压低功耗无线IOT应用的软件镦粗和软件瞬态耐受CMOS电路设计

获取原文

摘要

In the wireless IoT applications, low power is a critical criteria, and low-voltage is a direct way to meet such demand. However, low-voltage criteria in advanced CMOS VLSI designs will lead to critical design challenges in dealing with soft-error interference, especial while the cascade transistor number is limited under low-voltage operations. Some possible low-voltage SEU-tolerant and SET-tolerant circuit design methods are discussed in this paper, such as robust C-element, Error-Correction with Duplication, dual interlocked storage cell (DICE) latch, and such as feedback redundant SEU-tolerant (FERST) latch designs.
机译:在无线物联网应用中,低功率是关键标准,低压是满足此类需求的直接方式。然而,高级CMOS VLSI设计中的低压标准将导致在处理软错误干扰方面,特别是在低压操作下受到限制时的临界设计挑战,特别是在级联晶体管数受到限制。本文讨论了一些可能的低压SEU耐受和耐受电路设计方法,例如坚固的C元素,与复制,双互锁的存储单元(骰子)锁存器等纠错,以及反馈冗余SEU-宽容(Forst)闩锁设计。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号