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首页> 外文期刊>Wireless personal communications: An Internaional Journal >A Low-Voltage and Low-Power 3-GHz CMOS LC VCO for S-Band Wireless Applications
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A Low-Voltage and Low-Power 3-GHz CMOS LC VCO for S-Band Wireless Applications

机译:适用于S波段无线应用的低压低功耗3 GHz CMOS LC VCO

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摘要

A fully integrated 0.18-μm CMOS LC-tank voltage-controlled oscillator (VCO) suitable for low-voltage and low-power S-band wireless applications is proposed in this paper. In order to meet the requirement of low voltage applications, a differential configuration with two cross-coupled pairs by adopting admittance-transforming technique is employed. By using forward-body-biased metal oxide semiconductor field effect transistors, the proposed VCO can operate at 0.4V supply voltage. Despite the low power supply near threshold voltage, the VCO achieves wide tuning range by using a voltage-boosting circuit and the standard mode PMOS varactors in the proposed oscillator architecture. The simulation results show that the proposed VCO achieves phase noise of -120.1 dBc/Hz at 1MHz offset and 39.3% tuning range while consuming only 594 μW in 0.4V supply. Figure-of-merit with tuning range of the proposed VCO is -192.1 dB at 3 GHz.
机译:本文提出了一种适用于低压和低功耗S波段无线应用的完全集成的0.18μmCMOS LC储罐压控振荡器(VCO)。为了满足低压应用的要求,采用导纳变换技术,采用两对交叉耦合的差分配置。通过使用正向偏置的金属氧化物半导体场效应晶体管,建议的VCO可以在0.4V的电源电压下工作。尽管低电源电压接近阈值电压,但VCO在建议的振荡器架构中通过使用升压电路和标准模式PMOS变容二极管实现了宽调谐范围。仿真结果表明,所提出的VCO在1MHz偏移和39.3%的调谐范围内达到-120.1 dBc / Hz的相位噪声,而在0.4V电源中仅消耗594μW。拟议VCO的调谐范围的品质因数在3 GHz时为-192.1 dB。

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