Device design considerations for ultra-thin body non-hysteretic negative capacitance FETs

摘要

We present a simulation-based analysis of device design for ultra-thin body non-hysteretic Negative-Capacitance-FET (NCFET). Subthreshold swing dependencies on the relationship between the negative capacitance (from ferroelectric) and the positive capacitance (from the underlying MOSFET) are illustrated. To achieve less than 60mV/decade swing and hysteresis free operation, the negative capacitance needs to be smaller than the gate oxide capacitance, and be larger than the total underlying MOSFET capacitance within the operating voltage.