首页> 外文会议>IEEE Photovoltaic Specialists Conference >INVESTIGATION OF THE EFFECT OF COMPENSATION RATIO (Rc) ON SOLARCELLS FABRICATED WITH SOLAR GRADE (S0G) CZOCHRALSKI SILICON
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INVESTIGATION OF THE EFFECT OF COMPENSATION RATIO (Rc) ON SOLARCELLS FABRICATED WITH SOLAR GRADE (S0G) CZOCHRALSKI SILICON

机译:对太阳能级(S0G)CZOCHRALSKI硅制备的Solarcells的补偿比(RC)效果的研究

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Fabrication and characterization of monocrystalline silicon (Si) solar cells was performed on wafers containing compensated solar grade Si. The wafers used in these experiments were sawn from ingots grown with different compensation ratios. Efficiencies in the range of 17.017.8% were obtained from all the different groups of wafers. Efficiency was observed to decrease as compensation ratio increased. After processing, wafers were put under light to observe the effects of light induced degradation (LID). Degradation was seen on all cells, with the greatest impact on wafers with the highest compensation ratio (between 0.5-1% absolute drop in efficiency). Finally, processed wafers were selected from some groups to measure the bulk lifetime. The trend in bulk lifetime follows the trend in efficiency.
机译:在含有补偿太阳级Si的晶片上进行单晶硅(Si)太阳能电池的制备和表征。这些实验中使用的晶片被用不同补偿比种植的锭锯。从所有不同的晶片组获得17.017.8%范围内的效率。随着补偿率的增加,观察到效率降低。加工后,将晶片放在光线下,观察光引起的降解(盖子)的影响。在所有细胞上看到降解,对晶片的最大影响最大,补偿率最高(效率绝对下降0.5-1%)。最后,从某些组中选择了处理的晶片以测量批量生产。批量生产的趋势遵循效率的趋势。

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