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Manufacturing method of the solar-grade silicon single crystal using Czochralski-zone melting process

机译:利用直拉区熔融法制造太阳能级硅单晶的方法

摘要

present invention, in an equal diameter growth step of zone melting stage, under the control of the electric control system of the zone melting silicon single crystal furnace, the lower rotary motor forward direction are rotated alternately in opposite directions, the to provide a method for manufacturing a solar-grade silicon single crystal using a predetermined forward angle and reverse angle Czochralski-zone melting process of rotating the silicon single crystal by the lower rotary motor. The present invention enhances the uniformity in the radial direction of the solar-grade silicon single crystal, and solve the problems center of solar grade silicon single crystal is blackened, the conversion efficiency of the solar cell obtained from the solar-grade silicon monocrystal it is possible to increase.FIELD 1
机译:本发明,在区域熔化阶段的等径生长步骤中,在区域熔化硅单晶炉的电控制系统的控制下,使下部旋转电动机的正方向交替地向相反方向旋转,从而提供一种方法。使用通过下旋转电机旋转硅单晶的预定正向角和反向角切克劳斯基区熔化工艺来制造太阳能级硅单晶。本发明提高了太阳能级硅单晶在径向上的均匀性,解决了太阳能级硅单晶中心变黑的问题,由太阳能级硅单晶获得的太阳能电池的转换效率为可能增加。领域1

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