THERMOPOWER MEASUREMENT OF SINGLE NANOWIRE USING A MEMS DEVICE

摘要

We have fabricated a MEMS device on suspended silicon nitride in order to measure the thermoelectric properties of single nanowire. The temperature gradient was generated by a nanoheater and the temperatures of thermometers were calibrated and measured. Seebeck coefficient and electrical conductivity of single Bi_2Te_3 nanowire with a 70 nm-diameter were measured in the temperature range of 50 K to 400 K. Based on the simulation results of the temperature distribution over the MEMS structure, the method of calibrating the temperature and measurement uncertainty are discussed.