Numerical Analysis of a Trench Gate FLIMOSFET with No Quasi-Saturation, Improved Specific On-Resistance and Better Synchronous Rectifying Characteristics

摘要

In this paper, we report a novel Trench gate FLIMOSFET structure designed using the concept of "Opposite Doped Buried Regions (ODBR) and floating island (FLIMOSFET) along with Trench-gate technology. The proposed device structure exhibits quasi-saturation free output and transconductance characteristics over a wide range of voltages as well as gives reduced on-resistance when compared with the conventional FLIMOSFET for two trench depths 2.5 and 3 microns. The new device structure does not give any degradation towards the breakdown voltage which remains almost constant at 65 volts. It also exhibit better synchronous rectifying characteristics.