Novel Fabrication Method for Self-Aligned Bottom-Gate Oxide TFTs

摘要

We report here a novel fabrication method using excimer laser irradiation for self-aligned bottom-gate oxide thin-film transistors (TFTs). Irradiation from the back-side of the substrate using the gate electrode as a mask reduces resistance in InGaZnO (IGZO) films sufficiently for their application as source/drain regions in bottom-gate IGZO-TFTs.