Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate

摘要

A method for fabricating self-aligned bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs) with low parasitic capacitance by utilizing backside excimer-laser irradiation through a substrate is proposed and experimentally validated. Irradiation from the backside of the glass substrate using gate electrode as a mask reduces resistance of the IGZO film selectively for their application as source/drain regions in bottom-gate IGZO-TFTs. This method offers a wide process margin with respect to laser energy density and is applicable to large-area processing.