首页> 外文会议>Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on >Design and progress of a wideband 120–210 GHz low noise amplifier
【24h】

Design and progress of a wideband 120–210 GHz low noise amplifier

机译:宽带120–210 GHz低噪声放大器的设计和进展

获取原文

摘要

In order to further improve the sensitivity and resolution of radiometer front-ends and also astronomy applications, amplifiers are needed with the lowest noise figure and high flat gain in G-band frequency range. Hence, we designed and demonstrated a MMIC LNA using Agilent EEHEMT model of 0.07 μm InP HEMT for operating at 120–210 GHz frequency broadband range. Simulation results illustrate smooth gain greater than 23 dB and noise figure about 1.5 dB across the bandwidth at 290 K according to IEEE standard ambient temperature. Input and output return losses are greater than 10 dB and LNA is unconditionally stable at its operating frequency range. Validation of performance for designed MMIC LNA was investigated from many aspects by simulation and measurement results which were done for MMICs InP HEMT technology during last years.
机译:为了进一步提高辐射计前端的灵敏度和分辨率以及天文学应用,需要在G频段频率范围内具有最低噪声系数和高平坦增益的放大器。因此,我们使用0.07μmInP HEMT的Agilent EEHEMT模型设计并演示了MMIC LNA,可在120–210 GHz频率宽带范围内工作。仿真结果表明,根据IEEE标准环境温度,在290 K时,整个带宽上的平滑增益均大于23 dB,噪声系数约为1.5 dB。输入和输出回波损耗大于10 dB,LNA在其工作频率范围内无条件稳定。通过仿真和测量结果从许多方面对设计的MMIC LNA的性能进行了验证,这些仿真和测量结果是对MMIC InP HEMT技术在过去几年中所做的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号