首页> 外文会议>European Microwave Integrated Circuits Conference >A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling

【24h】

A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling

机译：一种与大信号建模兼容的非准静态，放松时间小信号HEMT模型

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

A non-quasi-static, relaxation-time small-signal HEMT model is proposed that is fully compatible with large-signal modeling. The small-signal model is derived by linearization from a large-signal, charge-conserving model that uses a relaxation-time approximation. The model's topology is fully symmetrical with respect to the Gate, and makes use of a comprehensive extrinsic network.

机译：提出了一种非准静态，放松时间小信号HEMT模型，其与大信号建模完全兼容。小信号模型是通过从大信号，电荷节约模型的线性化来源的，该模型使用放松时间近似。该模型的拓扑相对于门来完全对称，并利用全面的外在网络。

著录项

来源
《European Microwave Integrated Circuits Conference 》|2006年||共4页
会议地点
作者
Wolfram C. Stiebler;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TN4-53;
关键词
Small-signal model; Non-quasi-static;

机译：小信号模型;非准静态;

相似文献

外文文献
中文文献
专利

1. Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs [J] . In Man Kang, Hyungcheol Shin IEEE transactions on nanotechnology . 2006 ,第3期

机译：SOI FinFET的非准静态小信号建模和分析参数提取
2. Non-quasi-static transient and small-signal two-dimensional modeling of GaAs MESFET's with emphasis on distributed effects [J] . Akhtar S., Tiwari S. IEEE Transactions on Electron Devices . 1993 ,第12期

机译：GaAs MESFET的非准静态瞬态和小信号二维建模，重点在于分布效应
3. Simple and accurate approaches to implement the complex trans-conductance suited for time-domain simulators for small-signal and large-signal table-based models [J] . Seyed Majid Homayouni, Dominique Schreurs, Bart Nauwelaers International journal of numerical modelling . 2010 ,第2期

机译：简单，准确的方法来实现适用于时域模拟器的复杂跨导，适用于基于小信号和大信号表的模型
4. A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling [C] . Wolfram C. Stiebler European Microwave Integrated Circuits Conference . 2006

机译：一种与大信号建模兼容的非准静态，放松时间小信号HEMT模型
5. Unified DC/small-signal/large-signal microwave device modeling and circuit optimization. [D] . Ye, Shen. 1991

机译：统一的DC /小信号/大信号微波设备建模和电路优化。
6. Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors [O] . Sergio Iván Ravello Arias, Diego Ramírez Muñoz, Jaime Sánchez Moreno, 2013

机译：磁阻电流传感器中交流大信号频率响应的分数模型
7. A single relaxation-time non-quasi-static model for monolithic MESFET devices [O] . Martín-Guerrero T.M., Esteban-Marzo J., Castillo-Vázquez B., 2002

机译：单片MESFET器件的单个弛豫时间非准静态模型
8. Advanced Large-Signal Modeling of GaN-HEMTs. [R] . Berroth, M., Chigaeva, E., Dettmann, I., 2002

机译：GaN-HEmT的先进大信号建模。

A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling

摘要

著录项

相似文献

相关主题

期刊订阅