Reconfigurable wideband LNAs using ohmic contact and capacitive RF-MEMS switching circuits

摘要

We present two wideband reconfigurable LNA hybrid circuits realized using ohmic contact and capacitive RF-MEMS SPDT switch networks made on GaAs and quartz substrates, respectively. The wideband GaAs MEMS SPDT switch circuit used presents a loss of less than 1.0 dB and isolation higher than 15 dB from DC up to 34 GHz and the capacitive MEMS SPDT switch circuit has 0.9 dB of in-band loss and 8 dB of isolation at 18 GHz. The ohmic contact and capacitive RF-MEMS low-power switched LNAs maintain a high gain and linearity together with NF=3–5 dB at 5–26 GHz and 12–26 GHz, respectively. The two reconfigurable wideband LNAs further present 18 dB and 11 dB of switched (ON and OFF state) isolation at 18 GHz.