Study on doping profile and scaling characteristics of gate and channel engineered symmetric double gate MOSFET

摘要

The present work reports the effect of device doping profile and dimension scaling on electronic properties of a gate and channel engineered symmetric double gate MOSFET. Based on a two dimensional mathematical model incorporating Poisson's and basic drift-diffusion equations, the work demonstrates how the basic electronic parameters like surface potential, threshold voltage and drain to source current of a triple material double gate double halo gate stacked MOSFET vary owing to different doping profile (uniform, linear or Gaussian doping profile) and the scaling of device dimensions like channel thickness and effective gate oxide thickness. The variations in electronic properties due to the doping profile and device dimension scaling have also been explained in terms of fundamental device physics. The study illustrates that the selection of a particular device dimension is actually a trade-off among several basic electronic properties of the device. All the analytical results have been validated with a commercially available two dimensional device simulator.