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Analysis of Subthreshold Transmission Characteristics for Gate Voltage and Doping Profiles of Asymmetric Double Gate MOSFET

机译：非对称双栅MOSFET栅极电压和掺杂谱的子尺寸传输特性分析

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Hakkee Jung;
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1. Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region [J] . Shin Yong Hyeon, Yun Ilgu Solid-State Electronics . 2016,第juna期

机译：亚阈值区域具有栅氧化物厚度和平坦带电压变化的非对称双栅MOSFET的解析模型
2. A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile [J] . Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit Journal of Nanoelectronics and Optoelectronics . 2010,第3期

机译：具有垂直高斯型掺杂轮廓的掺杂双栅极（DG）MOSFET的表面电势和亚阈值电流的二维模型
3. Analysis of Subthreshold Characteristics for Top and Bottom Flat-band Voltages of Junction less Double Gate MOSFET [J] . Hakkee Jung International Journal of Engineering Trends and Technology . 2021,第3期

机译：接线底栅极平板电压的亚阈值特性分析较少的双栅MOSFET
4. Subthreshold current model for short-channel double-gate (DG) MOSFETs with vertical Gaussian doping profile [C] . Pramod Kumar Tiwari, Sarvesh Dubey, S. Jit Latest trends on circuits, systems and signals . 2010

机译：具有垂直高斯掺杂分布的短沟道双栅极（DG）MOSFET的亚阈值电流模型
5. Design and analysis of double-gate CMOS for low-voltage integrated circuit applications, including physical modeling of silicon-on-insulator MOSFETs. [D] . Kim, Keunwoo. 2001

机译：用于低压集成电路应用的双栅CMOS设计和分析，包括绝缘体上硅MOSFET的物理建模。
6. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics [O] . Jaeyeop Na, Jinhee Cheon, Kwangsoo Kim 2021

机译：4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
7. Analysis of Channel Doping Profile Dependent Threshold Voltage Characteristics for Double Gate MOSFET [O] . Hak-Kee Jung, Ji-Hyung Han, Jae-Hyung Lee, 2011

机译：用于双栅MOSFET的通道掺杂轮廓相关阈值特性的分析

Analysis of Subthreshold Transmission Characteristics for Gate Voltage and Doping Profiles of Asymmetric Double Gate MOSFET

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