Performance analysis of bulk driven MOSFET and CNFET for low voltage applications

摘要

Threshold voltage is a critical parameter for low voltage operation of any CMOS devices. The threshold voltage does not scale down at the same rate as of power supply. This poses a great challenge to CMOS mixed-signal design. Bulk driven MOSFET (BDM) is a very effective technique in removing the bottleneck caused by threshold voltage. In the present paper process, voltage and temperature (PVT) analysis of BDM is carried out. The effect of variations of device and environmental parameters namely leakage current, threshold voltage, supply voltage, temperature and body bias on circuit performance for 90nm technology node are analysed. The performance analysis of a ring oscillator circuit designed using BDM, conventional MOSFETs and carbon nano-tube field effect transistor (CNFET) has been carried out. From the present analysis it is inferred that alternative devices like bulk driven MOSFETs are promising candidates in terms of threshold voltage and delay reduction. Analysis has been carried out using HSPICE simulations for 90nm technology node.