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A subliminal bulk-driven circular amplifier for applications with low supply voltage

机译:阈下批量驱动圆形放大器,适用于低电源电压应用

摘要

The bulk-driven circular amplifier includes the first bulk-driven inverter (Inv.sub.1.n.), including the first and second transistor (M.sub.1.n., M.sub.2.n.), the second primary bulk-driven inverter (Inv.sub.21.n.) including the third and fourth transistor (M.sub.3.n., M.sub.4.n.), the second secondary bulk-driven inverter (Inv.sub.22.n.) including the fifth and sixth transistor (M.sub.5.n., M.sub.6.n.) and the third inverter (Inv.sub.3. n.) including the seventh and eighth transistor (M.sub.7.n., M.sub.8.n.). The gates-source (S) of the first, third, fifth and seventh transistor (M.sub.1.n., M.sub.3.n., M.sub.5.n., M.sub.7.n.) and the gate-bulk (B) of the seventh transistor (M.sub.7.n.) lead into the clamp of the supply voltage (V.sub.DD.n.). The gates-source (S) of the second, fourth, sixth and eighth transistor (M.sub.2.n., M.sub.4.n., M.sub.6.n., M.sub.8.n.) and the gate-bulk (B) of the eighth transistor (M.sub.8.n.) are grounded. The gate (G) of the first transistor (M.sub.1.n.) leads to the first clamp of the preload (V.sub.B1.n.). The gates (G) of the second, fourth and sixth transistor (M.sub.2.n., M.sub.4.n., M.sub.6.n.) lead to the clamp of the second preload (V.sub.B2 .n.). The gate (G) of the third transistor (M.sub.3.n.) leads to the clamp of the third preload (V.sub.B3.n.). The gate (G) of the fifth transistor (M.sub.5.n.) leads to the clamp of the fourth preload (V.sub.B4.n.). The gates-bulk (B) of the first and second transistor (M.sub.1.n., M.sub.2.n.) lead to the clamp of the input voltage (V.sub.in.n.). The gates-drain (D) of the first and second transistor (M.sub.1.n., M.sub.2.n.) and the gate-bulk (B) of the third, fourth, fifth and sixth transistor (M.sub.3.n ., M.sub.4.n., M.sub.5.n., M.sub.6.n.) are interconnected. The gates drain (D) of the third and fourth transistor (M.sub.3.n., M.sub.4.n.) and the gate (G) of the seventh transistor (M.sub.7.n.) are interconnected. The gates-drain (D) of the fifth and sixth transistor (M.sub.5.n., M.sub.6.n.) and the gate (G) of the eighth transistor (M.sub.8.n.) are interconnected. The gates-drain (D) of the seventh and eighth transistor (M.sub.7.n., M.sub.8.n.) leads to the clamp of the output voltage (V.sub.out.n.).
机译:体驱动圆形放大器包括第一体驱动反相器(Inv.sub.1.n.),包括第一和第二晶体管(M.sub.1.n.,M.sub.2.n.),包括第三和第四晶体管(M.sub.3.n.,M.sub.4.n.)的第二主块驱动逆变器(Inv.sub.n.21.n.) (Inv.sub.n.)包括第五和第六晶体管(M.sub.5.n. M.sub.n.)和第三反相器(Inv.sub.n.n.),包括第七和第八晶体管(M.sub.7.n. M.sub.8.n.)。第一,第三,第五和第七晶体管(M.sub.n.,M.sub.3.n.,M.sub.5.n.,M.sub.7)的栅极-源极(S) N.)和第七晶体管(M.sub.n.)的栅极(B)引入电源电压(V.DD.n.)的钳位。第二,第四,第六和第八个晶体管(M.sub.n.,M.sub.4.n.,M.sub.6.n.,M.sub.8)的栅极-源极(S) N.)和第八晶体管(M.sub.n.)的栅极(B)接地。第一晶体管(M.sub.1.n.)的栅极(G)通向预载(VB1.n.)的第一钳位。第二,第四和第六晶体管(M.sub.2.n.,M.sub.n.,M.sub.n。)的栅极(G)导致第二预载( V.sub.n.)。第三晶体管(M.sub.n.)的栅极(G)通向第三预载(VB3.n.)的钳位。第五晶体管(M5.n.)的栅极(G)通向第四预载(VB4.n.)的钳位。第一和第二晶体管(M.sub.n.,M.sub.n.)的栅极(B)导致输入电压(Vin.n.)的钳位。第一和第二晶体管(M.sub.n.,M.sub.2.n.)的栅极-漏极(D)和第三,第四,第五和第六晶体管的栅极-体(B) (M.sub.n.,M.sub.4.n.,M.sub.5.n.,M.sub.6.n。)相互连接。第三和第四晶体管(M.sub.n.,M.sub.n。)的栅极(D)和第七晶体管(M.sub.n.n.)的栅极(G)。 )相互连接。第五和第六个晶体管(M.sub.n.,M.sub.n.)的栅极(D)和第八个晶体管(M.sub.8.n)的栅极(G) 。)相互连接。第七和第八个晶体管(M.sub.n.,M.sub.8.n)的栅极-漏极(D)导致输出电压(V.out.n.)的钳位。

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