High-Power, Long-Lifetime Green Laser Diodes with Wavelengths above 525 nm Grown on Semipolar {20-21} GaN Substrates

摘要

GaInN-based green laser diodes (LDs) with wavelengths above 525 nm were fabricated on semipolar {20-21} GaN substrates. The LDs were estimated to have lifetimes of over 5000 h for an optical output power of 50 mW at a case temperature of 55°C under continuous-wave operation.