High Reliable In-Ga-Zn-Oxide FET Based Electronic Global Shutter Sensors for In-Cell Optical Touch Screens and Image Sensors

摘要

A 6 inch XGA LCD touch screen with optical sensors in its pixels, using oxide semiconductor (OS) FETs has been developed. The extremely low off-state current of the OS FET facilitates the use of a global shutter and leads to an improved accuracy of touch detection. The possibility of a novel application of a touch screen and an image sensor that is an application of the combination of OS FETs and global shutter is proposed.