Photo-Sensor Thin Film Transistor based on Double Metal-Oxide Layer for In-cell Remote Touch Screen

摘要

16 inch LCD in-cell remote touch screen with photo sensor in which the active structure is comprised of double metal-oxide semiconductor layers (GIZO/IZO) in its pixels has been developed. Double metal-oxide thin film transistor (TFT) for both switch and sensor elements shows high photo current as I_(light)/I_(dark)>10~6, a mobility of >10cm~2/Vs and high stability under LCD operation condition. In this paper, the possibility of a novel application of an optical touch screen which is entirely based on the metal oxide TFT is proposed.