Silicon-rich oxide (SiOx, 04) and oxygen as the reactant gasses. The films were annealed at temperatures of 800 °C, 900 °C, 1000 °C and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.
展开▼
机译:使用低压化学气相沉积(LPCVD)方法在570°C的温度下使用硅烷(SiH 4)沉积富硅氧化物(SiO x inf>,0 )和氧气作为反应气体。薄膜在800°C,900°C,1000°C和1100°C的温度下退火,以使SiO x inf>膜中多余的硅分离为非晶SiO内部的纳米晶硅颗粒 x inf>矩阵。使用拉曼光谱法确定硅颗粒的尺寸。
展开▼