Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

摘要

Silicon-rich oxide (SiOx, 0 x 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at...