首页> 外文会议>International symposium on microelectronics >Wafer Bumping and Characterizations of Fine-Pitch Lead-Free Solder Microbumps on 12” (300mm) wafer for 3D IC Integration
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Wafer Bumping and Characterizations of Fine-Pitch Lead-Free Solder Microbumps on 12” (300mm) wafer for 3D IC Integration

机译:用于3D IC集成的12英寸(300毫米)晶片上的晶片凸点和小间距无铅焊料微凸点的表征

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In this study, the wafer bumping and characterization of fine-pitch lead-free solder microbumps on 300mmwafer for 3D IC integration are investigated. Emphasis is placed on the Cu-plating solutions (conformal and bottomup).Also, the amount of Cu and solder (Sn) volumes is examined. Furthermore, characterizations such as shearingtest and aging of the microbumps are provided and cross sections/SEM images of the microbumps before and aftertest are discussed. Finally, the process windows of applying the conventional electroplating wafer bumping methodof the ordinary solder bumps to the microbumps are also presented.
机译:在这项研究中,对300mm的微间距无铅焊料微凸块进行了晶圆凸点和表征 研究了用于3D IC集成的晶圆。重点放在镀铜溶液(保形和自底向上)上。 此外,还要检查铜和焊料(Sn)的数量。此外,剪切等特征 提供了微型凸块的测试和老化,以及微型凸块之前和之后的横截面/ SEM图像 测试进行了讨论。最后,应用常规电镀晶圆凸点法的工艺窗口 还介绍了微型凸点上的普通焊料凸点。

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