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Thin Wafer Handling of 300mm Wafer for 3D IC Integration

机译:用于3D IC集成的300mm晶圆的薄晶圆处理

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In this study, thin wafer handling of 300mm wafer for 3D IC Integration is investigated. Emphasis is placed onthe determination of the effect of a dicing tape on thin-wafer handling of wafers with Cu-Au pads, Cu-Ni-Au UBM,and TSV interposer with RDL. Also, thin-wafer handling critical issues such as the chip/interposer wafer, carrierwafer, temporary bonding, thinning, backside process, de-bonding, and assembly are presented and their potentialsolutions are discussed. Finally, state-of-the-art of materials and equipments for thin-wafer handling are examined.
机译:在这项研究中,研究了用于3D IC集成的300mm晶圆的薄晶圆处理。重点放在 确定切割带对带有Cu-Ni-Au UBM的Cu-Au焊盘的薄晶圆处理的影响, 和带有RDL的TSV插入器。此外,薄晶圆处理关键问题,例如芯片/插入式晶圆,载体 介绍了晶圆,临时键合,薄化,背面处理,去键合和组装,以及它们的潜力 解决方案进行了讨论。最后,研究了用于薄晶圆处理的最新材料和设备。

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