Lasing operation of long-wavelength transistor laser using AGaInAs/InP quantum well active region

摘要

A room-temperature continuous-wave operation of a 1.3 µm wavelength transistor laser (TL) with p/p configuration was achieved using AlGaInAs/InP 5 quantum-well active region A threshold current (emitter current) of 17 mA was obtained for a stripe width of 1.8 µm and a cavity length of 500 µm, and it was controlled by the collector-base voltage. Even though the current gain was only 0.01, three terminal operation was demonstrated and it can be improved by introducing n/p-TLs.