A de-embedding method for extracting S-parameters of vertical interconnect in advanced packaging

摘要

An extracting methodology is proposed to characterize the performance of interconnect. This work successfully extracts the interconnect by using transmission matrix (T-matrix) for calculation. This method exhibits its validity without frequency limitation mathematically. It can deal with most kinds of vertical interconnects including bond-wires, micro-bumps and through-silicon-vias (TSVs). Details of equations and measurement procedure are reported in this work. The bump in flip-chip process is taken as an example. The analysis is depicted and the measured results are performed for verification up to 20 GHz.