Strain engineering of thin epitaxial Si thin films on insulating oxide buffers is of special interest to boost charge carrier mobility for SOI technologies. The single crystalline Si(111)/Y2O3(111)/Pr2O3(111)/Si(111) heterostructure offers, in principle, the opportunity to grow strain-engineered epitaxial Si(111) layers, realizing compressed, fully relaxed, as well as tensile-strained Si films. The interface structures were precisely analyzed at the atomic scale through Cs-corrected STEM/EELS study.
展开▼
机译：为了提高SOI技术的电荷载流子迁移率，在绝缘氧化物缓冲层上进行薄外延Si薄膜的应变工程尤为重要。单晶Si（111）/ Y 2 O 3 （111）/ Pr 2 O 3 （111 ）/ Si（111）异质结构原则上提供了生长应变工程外延Si（111）层的机会，从而实现了压缩，完全松弛以及拉伸应变的Si膜。通过Cs校正的STEM / EELS研究，在原子尺度上精确地分析了界面结构。
展开▼
