The Transport Behaviors Controlled by the Doping Density in Weakly Coupled Superlattices

摘要

Within the sequential tunneling model, efforts are made to study the dynamics of the weakly coupled GaAs/AIAs superlattices controlled by the doping density. The states of the system system will be changed and transferred between the stationary and oscillational with different doping densityj The reason is that the existence of electric-field domains in GaAs/AIAs superlattices. A detailed study shows that the eiectrical hysteresis in the loop of current density voltage (J-U) curve is observed. The width of the hysteresis loop increases with increasing the doping density. In addition, numerical simulation also shows that different nonlinear dynamical regimes appear when an external microwave signal is imposed on the dc bias.