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K-type Thin Film Thermocouples Deposited on Ni-based Superalloy Substrates

机译:镍基高温合金基底上沉积的K型薄膜热电偶

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NiCr-NiSi K-type thin film thermocouples with multi-layer structure were fabricated on Ni-based superalloy substrates (95 mm×5 mm×2 mm). The multi-layer structure contains NiCrAlY buffer layer (2 urn)/ thermally grown AI2O_3 bond coating (200 nm)/ A12O_3 insulating layer (8 um)/ NiCr-NiSi thin film thermocouples (1 um)/ A1_2O_3 protecting layer (500 nm). The samples were statically calibrated in a tube furnace in the temperature range from 170 °C to 610 °C. The results show that the resistance of AI2O_3 insulating layer is about 14.6 kQ. at 800 °C and exceeds 100 M£2 at room temperature. The Seebeck coefficient a of the samples is about 34 uV/°C, and the sensitivity coefficient K is greater than 0.8 in the temperature range from 170 °C to 610 °C. The maximal sensitivity coefficient is about 0.97 at 265 °C.
机译:在Ni基高温合金基板(95mm×5mm×2mm)上制备了多层结构的NiCr-NiSi K型薄膜热电偶。多层结构包含NiCrAlY缓冲层(2 n)/热生长的AI2O_3粘结涂层(200 nm)/ Al2O_3绝缘层(8 um)/ NiCr-NiSi薄膜热电偶(1 um)/ Al2_2O_3保护层(500 nm) 。样品在管式炉中在170°C至610°C的温度范围内进行静态校准。结果表明,Al 2 O 3绝缘层的电阻约为14.6kQ。在800°C时,在室温下超过100 M£2。样品的塞贝克系数a约为34 uV /°C,在170°C至610°C的温度范围内,灵敏度系数K大于0.8。在265°C时,最大灵敏度系数约为0.97。

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