Influence of the annealing on the thermal stability of Ge-Sb-Te materials for recording devices

摘要

Phase change memory materials of Ge-Sb-Te system [(GeTe)_m(Sb_2Te_3)_n (m : n = 1:1; 1:2; 2:1)] were studied during thermal cycling by differential scanning calorimetry, and thermal properties were determined. Reproducible endothermic peak in the range of 390-415°C was revealed in Ge_2Sb_2Te_5, GeSb_2Te_4, GeSb_4Te_7, which may possibly influence on the kinetics and endurance of data reading processes in phase-change memory devices. The nature of this endothermic peak is discussed. It was shown that additional annealing of synthesized Ge_2Sb_2Te_5 increase stability of structure and thermal properties of the material.