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In-plane DEAP stack actuators for optical MEMS applications

机译:用于光学MEMS应用的面内DEAP堆栈执行器

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Recently, stacked dielectric polymer actuators have gained a lot of attention as MEMS actuators. In this paper we present a new kind of in-plane stack actuator. In contrast to its multilayer counterparts, it consists of only one active layer with inter-digitated microstructured soft electrodes which allow for a linear, radial or even asymmetric pulling motion in the working plane. The single layer design makes it in principle compatible with standard MEMS processes like deep reactive ion etching as well as silicone casting for optical components. Nevertheless, the wafer level fabrication process does not require any photolithography or clean room processes. The actuator consists of a microstructured layer of carbon black or nanotube filled PDMS which is suspended over a KOH etched trench on a (111) silicon wafer. The conductive PDMS electrodes are structured by laser ablation and subsequently embedded in a dielectric. The use of a (111) silicon wafer enables a mask less definition of the trench as the (111) layer is almost not attacked by the KOH etchant. The trench is defined by laser induced damage of the silicon wafer, so only exposed areas are etched. This allows for a true rapid prototyping of actuators with a fabrication time of less than one day.
机译:近来,堆叠的介电聚合物致动器作为MEMS致动器已经引起了很多关注。在本文中,我们提出了一种新型的面内堆栈致动器。与它的多层结构相反,它仅由一个具有相互交叉的微结构化软电极的活性层组成,这些电极允许在工作平面中进行线性,径向或什至不对称的牵拉运动。单层设计使其在原则上与标准MEMS工艺兼容,例如深反应离子刻蚀以及用于光学组件的硅酮浇铸。然而,晶片级制造工艺不需要任何光刻或无尘室工艺。致动器由炭黑或纳米管填充的PDMS的微结构层组成,该微结构层悬浮在(111)硅晶片上的KOH蚀刻沟槽上方。导电PDMS电极通过激光烧蚀构造,然后嵌入电介质中。 (111)硅晶片的使用使得沟槽的掩模的清晰度降低,因为(111)层几乎不受KOH蚀刻剂的侵蚀。沟槽是由激光诱导的硅晶片损坏所定义的,因此仅蚀刻了裸露的区域。这样就可以以不到一天的制造时间,对执行器进行真正的快速原型制作。

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